Degradation behaviors of metal-induced laterally crystallized n-Type polycrystalline silicon thin-film transistors under DC bias stresses

IEEE Transactions on Electron Devices

Volumn 54, Issue 2, 2007, Pages 225-232

  Xue, Min ^a   Wang, Mingxiang ^a   Zhu, Zhen ^a   Zhang, Dongli ^b   Wong, Man ^b  

^a SOOCHOW UNIVERSITY   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Hot carrier (HC) degradation; Low temperature polycrystalline silicon (LTPS); Metal induced lateral crystallization; Reliability; Self heating (SH) degradation; Thin film transistors (TFTs)

Indexed keywords

DEGRADATION; DEHYDROGENATION; HOT CARRIERS; POLYSILICON; THRESHOLD VOLTAGE;

HOT-CARRIER DEGRADATION; LOW-TEMPERATURE POLYCRYSTALLINE SILICON; SELF-HEATING DEGRADATION;

THIN FILM TRANSISTORS;

EID: 33847643162     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.888723     Document Type: Article

References (23)

1. Y. Nakajima, Y. Kida, M. Murase, Y. Toyoshima, and Y. Maki, "Latest developments for 'system-on-glass' displays using low-temperature poly-Si TFTs," J. Soc. Inf. Disp., vol. 12, no. 4, pp. 361-365, Dec. 2004.
2. Z. Meng and M. Wong, "Active-matrix organic light-emitting diode displays realized using metal-induced unilaterally crystallized polycrystalline silicon thin-film transistors," IEEE Trans. Electron Devices, vol. 49, no. 6, pp. 991-996, Jun. 2002.
3. M. Wong and H. S. Kwok, "High-performance polycrystalline silicon thin-film transistor technology using low-temperature metal-induced unilateral crystallization," Microelectron. J., vol. 35, no. 4, pp. 337-341, Apr. 2004.
4. M. Wong, Z. Meng, and X. Shi, "Characteristics and stability of improved re-crystallized metal-induced laterally crystallized polycrystalline-silicon thin-film transistors for display applications," J. Soc. Inf. Disp., vol. 11, no. 4, pp. 633-637, Dec. 2003.
5. T. Yoshida, Y. Ebiko, M. Takei, N. Sasaki, and T. Tsuchiya, "Grain-boundary related hot carrier degradation mechanism in low-temperature polycrystalline silicon thin-film transistors," Jpn. J. Appl. Phys., vol. 42, no. 4B, pp. 1999-2003, Apr. 2003.
6. S. Inoue, M. Kimura, and T. Shimoda, "Analysis and classification of degradation phenomena in polycrystalline-silicon thin film transistors fabricated by a low-temperature process using emission light microscopy," Jpn. J. Appl. Phys., vol. 42, no. 3, pp. 1168-1172, Mar. 2003.
7. S. De Wang, T. Y. Chang, W. H. Lo, and T. F. Lei, "Mechanism of oncurrent and off-current instabilities under electrical stress in polycrystalline silicon thin-film transistors," in Proc. 43rd Annu. IEEE Int. Rel. Phys. Symp., 2005, pp. 702-703.
8. S. Inoue, H. Ohshimai, and T. Shimoda, "Analysis of degradation phenomenon caused by self-heating in low-temperature-processed polycrystalline silicon thin film transistors," Jpn. J. Appl. Phys., vol. 41, no. 11A, pp. 6313-6319, Nov. 2002.
9. C.-W. Lin, C.-H. Tseng, T.-K. Chang, Y.-H. Chang, F.-T. Chu, C.-W. Lin, W.-T. Wang, and H.-C. Cheng, "An investigation of bias temperature instability in hydrogenated low-temperature polycrystal-line silicon thin film transistors," Jpn. J. Appl. Phys., vol. 41, no. 9, pp. 5517-5522, Sep. 2002.
10. T. Sameshima, Y. Sunaga, and A. Kohno, "Measurements of temperature distribution in polycrystalline thin film transistors caused by self-heating," Jpn. J. Appl. Phys. Lett., vol. 35, no. 3A, pp. 308-310, Mar. 1996.
11. Y. Uraoka, T. Hatayama, T. Fuyuki, T. Kawamura, and Y. Tsuchihashi, "Hot carrier effects in low-temperature polysilicon thin-film transistors," Jpn. J. Appl. Phys., vol. 40, no. 4B, pp. 2833-2836, Apr. 2001.
12. H. Tango, T. Satoh, and Y. Imai, "Hot-carrier-induced degradation of threshold voltage and transconductance in n-channel LDD and SD poly-Si TFTs," Electron. Lett., vol. 38, no. 20, pp. 1227-1228, Sep. 2002.
13. L. Mariucci, A. Pecora, S. Giovannini, R. Carluccio, F. Massussi, and G. Fortunato, "Hot carrier effects in polycrystalline silicon thin-film transistors: Analysis of electrical characteristics and noise performance modifications," Microelectron. Reliab., vol. 39, no. 1, pp. 45-52, Jan. 1999.
14. N. A. Hastas, N. Archontas, C. A. Dimitriadis, G. Kamarinos, T. Nikolaidis, N. Georgoulas, and A. Thanailakis, "Substrate current and degradation of n-channel polycrystalline silicon thin-film transistors," Microelectron. Reliab., vol. 45, no. 2, pp. 341-347, 2005.
15. L. Mariucci, G. Fortunato, R. Carluccio, A. Pecora, S. Giovannini, and F. Massussi, "Determination of hot-carrier induced interface state density in polycrystalline silicon thin-film transistors," J. Appl. Phys., vol. 84, no. 4, pp. 2341-2348, Aug. 1998.
16. F. V. Farmakis, C. A. Dimitriadis, J. Brini, G. Kamarinos, V. K. Gueorguiev, and T. E. Ivanov, "Photon emission and related hot-carrier effects in polycrystalline silicon thin-film transistors," J. Appl. Phys., vol. 85, no. 9, pp. 6917-6919, May 1999.
17. P. Hermans, R. Bellens, G. Groeseneken, and H. E. Maes, "Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs," IEEE Trans. Electron Devices, vol. 35, no. 12, pp. 2194-2209, Dec. 1988.
18. C. Hu, S. C. Tam, F.-C. Hsu, P.-K. Ko, T.-Y. Chan, and K. W. Terrill, "Hot-electron-induced MOSFET degradation-model, monitor and improvement," IEEE Trans. Electron Devices, vol. ED-32, no. 2, pp. 375-385, Feb. 1985.
19. M. D. Jacunski, M. S. Shur, and M. Hack, "Threshold voltage, field effect mobility, and gate-to-channel capacitance in polysilicon TFTs," IEEE Trans. Electron Devices, vol. 43, no. 9, pp. 1433-1440, Sep. 1996.
20. N. C.-C. Lu, L. Gerzberg, C.-Y. Lu, and J. D. Meindl, "A conduction model for semiconductor-grain-boundary-semiconductor barriers in polycrystalline-silicon films," IEEE Trans. Electron Devices, vol. ED-30, no. 2, pp. 137-149, Feb. 1983.
21. M. Kimura, S. Inoue, T. Shimoda, and T. Eguchi, "Dependence of polycrystalline silicon thin-film transistor characteristics on the grain boundary location," J. Appl. Phys., vol. 89, no. 1, pp. 596-600, Jan. 2001.
22. O. K. B. Lui, M. J. Quinn, S. W.-B. Tam, T. M. Brown, P. Migliorato, and H. Ohshima, "Investigation of the low field leakage current mechanism in polysilicon TFTs," IEEE Trans. Electron Devices, vol. 45, no. 1, pp. 213-217, Jan. 1998.
23. Z. Zhu, M. Wang, D. Zhang, and M. Wong, "Hot carrier induced leakage current instability in metal induced laterally crystallized n-type polysilicon thin film transistors," in Proc. 8th Int. Conf. Solid-State and Integr. Circuit Technol., Shanghai, China, 2006, pp. 1129-1131.