Hot carrier effects in low-temperature polysilicon thin-film transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2833-2836

  Uraoka, Yukiharu ^a   Hatayama, Tomoaki ^a   Fuyuki, Takashi ^a   Kawamura, Tetsuya ^b   Tsuchihashi, Yuji ^b  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

Device simulation; Hot carrier; LDD; Low temperature poly Si; Photon emission

Indexed keywords

DEGRADATION; HOT CARRIERS; MICROSCOPES; PHOTOEMISSION; PHOTONS; POLYSILICON; SEMICONDUCTOR DOPING;

LIGHT DOPED DRAIN (LDD);

THIN FILM TRANSISTORS;

EID: 0035300632     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2833     Document Type: Article

References (6)