Hot carrier induced leakage current instability in metal induced laterally crystallized n-type poly-silicon thin film transistors

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Volumn , Issue , 2006, Pages 1129-1131

  Zhu, Zhen ^a   Wang, Mingxiang ^a   Zhang, Dongli ^b   Wong, Man ^b  

^a SOOCHOW UNIVERSITY   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; POLYSILICON; STRESS ANALYSIS; THERMODYNAMIC STABILITY; THIN FILM TRANSISTORS;

CHANNEL RESISTANCE; DRAIN VOLTAGES; VARIED STRESS GATE;

LEAKAGE CURRENTS;

EID: 34547377343     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2006.306702     Document Type: Conference Paper

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