Dependence of polycrystalline silicon thin-film transistor characteristics on the grain-boundary location

Journal of Applied Physics

Volumn 89, Issue 1, 2001, Pages 596-600

  Kimura, Mutsumi ^a   Inoue, Satoshi ^a   Shimoda, Tatsuya ^a   Eguchi, Tsukasa ^a  

^a SEIKO EPSON CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001293246     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1329141     Document Type: Article

References (46)

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