Characteristics and stability of improved re-crystallized metal-induced laterally crystallized polycrystalline-silicon thin-film transistors for display applications

Journal of the Society for Information Display

Volumn 11, Issue 4, 2003, Pages 633-637

  Wong, Man ^a   Meng, Zhiguo ^a   Shi, Xuejie ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Metal induced lateral crystallization; Polycrystalline silicon; Re crystallization; Thin film transistor

Indexed keywords

ACIDS; CLEANING; DISPLAY DEVICES; NICKEL; POLYCRYSTALLINE MATERIALS; RECRYSTALLIZATION (METALLURGY); RELIABILITY; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; STABILITY; THRESHOLD VOLTAGE;

METAL INDUCED LATERAL CRYSTALLIZATION; POLYCRYSTALLINE SILICON;

THIN FILM TRANSISTORS;

EID: 0942300770     PISSN: 10710922     EISSN: None     Source Type: Journal    
DOI: 10.1889/1.1825691     Document Type: Article

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