An investigation of bias temperature instability in hydrogenated low-temperature polycrystalline silicon thin film transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 9, 2002, Pages 5517-5522

  Lin, Ching Wei ^a,b   Tseng, Chang Ho ^a   Chang, Ting Kuo ^a   Chang, Yuan Hsun ^a   Chu, Fang Tsun ^a   Lin, Chiung Wei ^a   Wang, Wen Tung ^a   Cheng, Huang Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Depassivation passivation; Hot carrier; Hydrogenation; Polycrystalline silicon thin film transistor; Self heating

Indexed keywords

CHEMICAL BONDS; DEGRADATION; ELECTRIC FIELDS; HOT CARRIERS; HYDROGENATION; POLYSILICON; STRESSES;

BOND BREAKAGE;

THIN FILM TRANSISTORS;

EID: 0036757862     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.5517     Document Type: Article

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