Hot-carrier-induced degradation of threshold voltage and transconductance in n-channel LDD and SD poly-Si TFTs

Electronics Letters

Volumn 38, Issue 20, 2002, Pages 1227-1228

  Tango, H ^a   Satoh, T ^a   Imai, Y ^a  

^a TOKYO POLYTECHNIC UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; HOT CARRIERS; POLYSILICON; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

GATE OXIDE INTERFACE; GATE VOLTAGE; HOLE CURRENT; HOT CARRIER DEGRADATION;

THIN FILM TRANSISTORS;

EID: 0037179913     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020794     Document Type: Article

References (5)

1. FARMARKIS, F.V., BRINI, J., KAMARINOS, G., and DIMITRIADIS, C.A.: 'Anomalous turn-on voltage degradation during hot-carrier stress in polycrystalline silicon thin-film transistors', IEEE Electron Device Lett., 2001, 22, pp. 74-76
2. PICHON, L. RAOULT, F., MOHAMED-BRAHIM, T., BONNAUD, O., and SEHIL, H.: 'Effects of the in-situ drain doping on hot-carrier degradation in polysilicon thin film transistors', Solid-State Electron., 1996, 39, pp. 1065-1069
3. TAKEDA, E., KUME, H., TOYABE, T., and ASAI, S.: 'Submicrometer MOSFET structure for minimizing hot-carrier generation', IEEE Trans. Electron Devices, 1993, 40, pp. 611-618
4. HEREMANS, P., BELLENS, R., GROESENEKEN, G., and MAES, H.E.: 'Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs', IEEE Trans. Electron Devices, 1988, 35, pp. 2194-2209
5. CHAN, V.H., and CHUNG, E.: 'Two-stage hot-carrier degradation and its impact on submicrometer LDD NMOSFET lifetime prediction', IEEE Trans. Electron Devices, 1995, 42, pp. 957-972