-
1
-
-
85053286037
-
Hot carrier effects in n-channel polycrystalline silicon thin-film transistors: A correlation between off-current and transconductance variations
-
Fortunato G, Pecora A, Tallarida G, Mariucci L, Reita C, Migliorato P. Hot carrier effects in n-channel polycrystalline silicon thin-film transistors: a correlation between off-current and transconductance variations. IEEE Trans Electron Dev 1994;ED-41:340-6.
-
(1994)
IEEE Trans Electron Dev
, vol.ED-41
, pp. 340-346
-
-
Fortunato, G.1
Pecora, A.2
Tallarida, G.3
Mariucci, L.4
Reita, C.5
Migliorato, P.6
-
2
-
-
0039893037
-
Hot carrier induced degradation in polycrystalline silicon thin film transistors
-
Fortunato G, Tallarida G, Pecora A. Hot carrier induced degradation in polycrystalline silicon thin film transistors. Solid St Phenomena 1994;37(38):583-8.
-
(1994)
Solid St Phenomena
, vol.37
, Issue.38
, pp. 583-588
-
-
Fortunato, G.1
Tallarida, G.2
Pecora, A.3
-
3
-
-
0030080476
-
Kinetics of interface state generation induced by hot-carrier in n-channel polycrystalline silicon thin-film transistors
-
Fortunato G, Pecora A, Policicchio I, Plais F, Pribat D. Kinetics of interface state generation induced by hot-carrier in n-channel polycrystalline silicon thin-film transistors. Jpn J Appl Phys 1996;35:1544-7.
-
(1996)
Jpn J Appl Phys
, vol.35
, pp. 1544-1547
-
-
Fortunato, G.1
Pecora, A.2
Policicchio, I.3
Plais, F.4
Pribat, D.5
-
4
-
-
0023564219
-
The relationship between oxide charge and device degradation: A comparative study of n- and p-Channel MOSFETs
-
Schwerin A, Hansch W, Weber W. The relationship between oxide charge and device degradation: a comparative study of n- and p-Channel MOSFETs. IEEE Trans Electron Dev 1987;ED-34:2493-500.
-
(1987)
IEEE Trans Electron Dev
, vol.ED-34
, pp. 2493-2500
-
-
Schwerin, A.1
Hansch, W.2
Weber, W.3
-
6
-
-
0030082864
-
Large 1/f noise in polysilicon TFT loads and its effects on the stability of SRAM cells
-
Aoki M, Hashimoto T, Yamanaka T, Nagano T. Large 1/f noise in polysilicon TFT loads and its effects on the stability of SRAM cells. Jpn J Appl Phys 1996;35:838-41.
-
(1996)
Jpn J Appl Phys
, vol.35
, pp. 838-841
-
-
Aoki, M.1
Hashimoto, T.2
Yamanaka, T.3
Nagano, T.4
-
7
-
-
36449009150
-
Evidence of carrier number fluctuation as origin of 1/f noise in polycrystalline silicon thin film transistors
-
Corradetti A, Leoni R, Carluccio R, Fortunato G, Reita C, Plais F, Pribat D. Evidence of carrier number fluctuation as origin of 1/f noise in polycrystalline silicon thin film transistors. Appl Phys Lett 1995;67:1730-2.
-
(1995)
Appl Phys Lett
, vol.67
, pp. 1730-1732
-
-
Corradetti, A.1
Leoni, R.2
Carluccio, R.3
Fortunato, G.4
Reita, C.5
Plais, F.6
Pribat, D.7
-
8
-
-
0031552814
-
Noise performances in polycrystalline silicon thin film transistors fabricated by excimer laser annealing
-
Carluccio R, Corradetti A, Fortunato G, Reita C, Legagneux P, Plais F, Pribat D. Noise performances in polycrystalline silicon thin film transistors fabricated by excimer laser annealing. Appl Phys Lett 1997;71:578-80.
-
(1997)
Appl Phys Lett
, vol.71
, pp. 578-580
-
-
Carluccio, R.1
Corradetti, A.2
Fortunato, G.3
Reita, C.4
Legagneux, P.5
Plais, F.6
Pribat, D.7
-
9
-
-
0029271587
-
Microstructure of polycrystalline silicon films obtained by combined furnace and laser annealing
-
Carluccio R, Stoemenos J, Fortunato G, Meakin DB, Bianconi M. Microstructure of polycrystalline silicon films obtained by combined furnace and laser annealing. Appl Phys Lett 1995;66:1394.
-
(1995)
Appl Phys Lett
, vol.66
, pp. 1394
-
-
Carluccio, R.1
Stoemenos, J.2
Fortunato, G.3
Meakin, D.B.4
Bianconi, M.5
-
10
-
-
85031630321
-
Polysilicon thin-film transistors made by combined solid phase crystallization and excimer laser annealing
-
Tokyo, 11-12 Sep
-
Mariucci L, Carluccio R, Giovannini S, Pecora A, Fortunato G, Legagneux P, Plais F, Reita C, Pribat D, Stoemenos J. Polysilicon thin-film transistors made by combined solid phase crystallization and excimer laser annealing, Proc AM-LCD'97. Tokyo, 11-12 Sep, 1997. p. 163-6.
-
(1997)
Proc AM-LCD'97
, pp. 163-166
-
-
Mariucci, L.1
Carluccio, R.2
Giovannini, S.3
Pecora, A.4
Fortunato, G.5
Legagneux, P.6
Plais, F.7
Reita, C.8
Pribat, D.9
Stoemenos, J.10
-
11
-
-
0028381525
-
Low-temperature (≤600°C) polysilicon thin-film transistors
-
Stroh RJ, Plais F, Kretz T, Legagneux P, Huet O, Magis M, Pribat D, Jiang N, Hugon MC, Agius B. Low-temperature (≤600°C) polysilicon thin-film transistors. IEE Proc-Circuits Dev Syst 1994;141:9-13.
-
(1994)
IEE Proc-Circuits Dev Syst
, vol.141
, pp. 9-13
-
-
Stroh, R.J.1
Plais, F.2
Kretz, T.3
Legagneux, P.4
Huet, O.5
Magis, M.6
Pribat, D.7
Jiang, N.8
Hugon, M.C.9
Agius, B.10
-
12
-
-
6944256427
-
High electric field phenomena in polycrystalline silicon thin-film transistors
-
San Jose, 9-14 Feb
-
Fortunato G, Carluccio R, Colalongo L, Giovannini S, Mariucci L, Massussi F, Valdinoci M. High electric field phenomena in polycrystalline silicon thin-film transistors. Proc Electronic Imaging '97 SPIE. San Jose, 9-14 Feb, 1997. p. 3014.
-
(1997)
Proc Electronic Imaging '97 SPIE
, pp. 3014
-
-
Fortunato, G.1
Carluccio, R.2
Colalongo, L.3
Giovannini, S.4
Mariucci, L.5
Massussi, F.6
Valdinoci, M.7
-
13
-
-
0031341418
-
Floating body effects in polysilicon thin-film transistors
-
Valdinoci M, Colalongo L, Baccarani G, Fortunato G, Pecora A, Policicchio I. Floating body effects in polysilicon thin-film transistors. IEEE Trans Electron Dev 1997;44:2234-41.
-
(1997)
IEEE Trans Electron Dev
, vol.44
, pp. 2234-2241
-
-
Valdinoci, M.1
Colalongo, L.2
Baccarani, G.3
Fortunato, G.4
Pecora, A.5
Policicchio, I.6
-
14
-
-
0031238135
-
Analysis of electrical characteristics of polycrystalline silicon thin-film transistors under static and dynamic conditions
-
Valdinoci M, Colalongo L, Baccarani G, Pecora A, Policicchio I, Fortunato G, Plais F, Legagneux P, Reita C, Pribat D. Analysis of electrical characteristics of polycrystalline silicon thin-film transistors under static and dynamic conditions. Sol State Electron 1997;41:1363-9.
-
(1997)
Sol State Electron
, vol.41
, pp. 1363-1369
-
-
Valdinoci, M.1
Colalongo, L.2
Baccarani, G.3
Pecora, A.4
Policicchio, I.5
Fortunato, G.6
Plais, F.7
Legagneux, P.8
Reita, C.9
Pribat, D.10
-
15
-
-
0032047484
-
Numerical analysis of the electrical characteristics of polysilicon thin film transistors fabricated by excimer laser crystallization
-
Mariucci L, Giacometti F, Pecora A, Massussi F, Fortunato G. Numerical analysis of the electrical characteristics of polysilicon thin film transistors fabricated by excimer laser crystallization. Electron Lett 1998;34:924-6.
-
(1998)
Electron Lett
, vol.34
, pp. 924-926
-
-
Mariucci, L.1
Giacometti, F.2
Pecora, A.3
Massussi, F.4
Fortunato, G.5
-
17
-
-
84907701305
-
Low frequency fluctuations in scaled down silicon CMOS devices status and trend
-
Edinburgh, 11-15 Sept
-
Ghibaudo G, Roux-dit-Buisson O. Low frequency fluctuations in scaled down silicon CMOS devices status and trend. Proc ESSDERC '94. Edinburgh, 11-15 Sept, 1994. p. 693-700.
-
(1994)
Proc ESSDERC '94
, pp. 693-700
-
-
Ghibaudo, G.1
Roux-Dit-Buisson, O.2
-
18
-
-
0026144142
-
Improved analysis of low frequency noise in field-effect MO transistors
-
Ghibaudo G, Roux O, Nguyen-duc Ch, Balestra F, Brini J. Improved analysis of low frequency noise in field-effect MO transistors. Physica Status Solidi (a) 1991;124:571-81.
-
(1991)
Physica Status Solidi (A)
, vol.124
, pp. 571-581
-
-
Ghibaudo, G.1
Roux, O.2
Nguyen-Duc, Ch.3
Balestra, F.4
Brini, J.5
-
20
-
-
0003788668
-
-
Philadelphia: University of Pennsylvania Press
-
McWhorter AL. Semiconductor Surface Physics. Philadelphia: University of Pennsylvania Press, 1957. p. 207.
-
(1957)
Semiconductor Surface Physics
, pp. 207
-
-
McWhorter, A.L.1
-
21
-
-
0000849253
-
Correlation between 1/f noise and interface state density at the Fermi level in field effect transistors
-
Maes HE, Usmani SH, Groeseneken G. Correlation between 1/f noise and interface state density at the Fermi level in field effect transistors. J Appl Phys 1985;57:4811.
-
(1985)
J Appl Phys
, vol.57
, pp. 4811
-
-
Maes, H.E.1
Usmani, S.H.2
Groeseneken, G.3
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