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Volumn 39, Issue 1, 1999, Pages 45-52

Hot carrier effects in polycrystalline silicon thin-film transistors: Analysis of electrical characteristics and noise performance modifications

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; EXCIMER LASERS; HOT CARRIERS; INTERFACES (MATERIALS); POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON;

EID: 0032629884     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00162-0     Document Type: Article
Times cited : (9)

References (21)
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    • Fortunato G, Pecora A, Tallarida G, Mariucci L, Reita C, Migliorato P. Hot carrier effects in n-channel polycrystalline silicon thin-film transistors: a correlation between off-current and transconductance variations. IEEE Trans Electron Dev 1994;ED-41:340-6.
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  • 2
    • 0039893037 scopus 로고
    • Hot carrier induced degradation in polycrystalline silicon thin film transistors
    • Fortunato G, Tallarida G, Pecora A. Hot carrier induced degradation in polycrystalline silicon thin film transistors. Solid St Phenomena 1994;37(38):583-8.
    • (1994) Solid St Phenomena , vol.37 , Issue.38 , pp. 583-588
    • Fortunato, G.1    Tallarida, G.2    Pecora, A.3
  • 3
    • 0030080476 scopus 로고    scopus 로고
    • Kinetics of interface state generation induced by hot-carrier in n-channel polycrystalline silicon thin-film transistors
    • Fortunato G, Pecora A, Policicchio I, Plais F, Pribat D. Kinetics of interface state generation induced by hot-carrier in n-channel polycrystalline silicon thin-film transistors. Jpn J Appl Phys 1996;35:1544-7.
    • (1996) Jpn J Appl Phys , vol.35 , pp. 1544-1547
    • Fortunato, G.1    Pecora, A.2    Policicchio, I.3    Plais, F.4    Pribat, D.5
  • 4
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    • The relationship between oxide charge and device degradation: A comparative study of n- and p-Channel MOSFETs
    • Schwerin A, Hansch W, Weber W. The relationship between oxide charge and device degradation: a comparative study of n- and p-Channel MOSFETs. IEEE Trans Electron Dev 1987;ED-34:2493-500.
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    • Schwerin, A.1    Hansch, W.2    Weber, W.3
  • 6
    • 0030082864 scopus 로고    scopus 로고
    • Large 1/f noise in polysilicon TFT loads and its effects on the stability of SRAM cells
    • Aoki M, Hashimoto T, Yamanaka T, Nagano T. Large 1/f noise in polysilicon TFT loads and its effects on the stability of SRAM cells. Jpn J Appl Phys 1996;35:838-41.
    • (1996) Jpn J Appl Phys , vol.35 , pp. 838-841
    • Aoki, M.1    Hashimoto, T.2    Yamanaka, T.3    Nagano, T.4
  • 7
    • 36449009150 scopus 로고
    • Evidence of carrier number fluctuation as origin of 1/f noise in polycrystalline silicon thin film transistors
    • Corradetti A, Leoni R, Carluccio R, Fortunato G, Reita C, Plais F, Pribat D. Evidence of carrier number fluctuation as origin of 1/f noise in polycrystalline silicon thin film transistors. Appl Phys Lett 1995;67:1730-2.
    • (1995) Appl Phys Lett , vol.67 , pp. 1730-1732
    • Corradetti, A.1    Leoni, R.2    Carluccio, R.3    Fortunato, G.4    Reita, C.5    Plais, F.6    Pribat, D.7
  • 9
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    • Microstructure of polycrystalline silicon films obtained by combined furnace and laser annealing
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  • 15
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    • Numerical analysis of the electrical characteristics of polysilicon thin film transistors fabricated by excimer laser crystallization
    • Mariucci L, Giacometti F, Pecora A, Massussi F, Fortunato G. Numerical analysis of the electrical characteristics of polysilicon thin film transistors fabricated by excimer laser crystallization. Electron Lett 1998;34:924-6.
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    • Mariucci, L.1    Giacometti, F.2    Pecora, A.3    Massussi, F.4    Fortunato, G.5
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.