Investigation of the low field leakage current mechanism in polysilicon TFT's

IEEE Transactions on Electron Devices

Volumn 45, Issue 1, 1998, Pages 213-217

  Lui, O K B ^a   Quinn, M J ^a   Tam, S W B ^a   Brown, T M ^a   Migliorato, P ^a   Ohshima, H ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

2 d simulation; Degradation; Density of states; Device modeling; Laser recrystallization; Leakage current; Polysilicon tft's

Indexed keywords

COMPUTER SIMULATION; CRYSTALLIZATION; ELECTRONIC DENSITY OF STATES; LASER APPLICATIONS; LEAKAGE CURRENTS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

LASER RECRYSTALLIZATION;

THIN FILM TRANSISTORS;

EID: 0031701878     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658833     Document Type: Article

References (4)

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4. G. Fortunato, A. Pecora, G. Tallarida, L. Mariucci, C. Reita, and P. Migliorato, IEEE Trans. Electron Devices, vol. 41, p. 340, Mar. 1994.