High-performance polycrystalline silicon thin-film transistor technology using low-temperature metal-induced unilateral crystallization

Microelectronics Journal

Volumn 35, Issue 4, 2004, Pages 337-341

  Wong, Man ^a   Kwok, Hoi S ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Nickel; Polycrystalline silicon; Thin film transistor

Indexed keywords

CRYSTALLIZATION; ELECTRIC BREAKDOWN; ELECTRON MOBILITY; FLAT PANEL DISPLAYS; GRAIN BOUNDARIES; HOLE MOBILITY; LEAKAGE CURRENTS; LIGHT EMITTING DIODES; LIQUID CRYSTAL DISPLAYS; NICKEL; PHOTOSENSITIVITY; THIN FILM TRANSISTORS;

DRAIN BREAKDOWN; FIELD-EFFECT MOBILITY; METAL-INDUCED UNILATERAL CRYSTALLIZATION (MIUC);

POLYSILICON;

EID: 1442284516     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(03)00241-6     Document Type: Article

References (5)

1. Meng Z., Wang M., Wong M. IEEE Transactions on Electron Devices. 47:(2):2000;404-409.
2. Jin Z., Bhat G.A., Yeung M., Kwok H.S., Wong M. Journal of Applied Physics. 44:(11):1997;1958-1964.
3. Z. Meng, T. Ma, M. Wong, Technical Digest of the IEEE International Electron Devices Meeting. December/3-5/2001, Washington DC, USA, pp. 755-758.
4. Meng Z., Li C., Kwok H.S., Wong M. Journal of the Society for Information Display. 9:(4):2001;319-323.
5. Meng Z., Wang M., Kwok H.S., Wong M. Digest of Technical Papers. International Symposium of the Society for Information Display. 2000;. pp. 380-383.