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Journal of Applied Physics

Volumn 84, Issue 4, 1998, Pages 2341-2348

Determination of hot-carrier induced interface state density in polycrystalline silicon thin-film transistors

(8) Mariucci, L a Fortunato, G a Carluccio, R a Pecora, A a Giovannini, S a Massussi, F a Colalongo, L b Valdinoci, M b

a CNR (Italy)

b UNIVERSITY OF BOLOGNA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000999751 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.368302 Document Type: Article

Times cited : (39)

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