High Performance 25nm FDSOI Devices with Extremely Thin Silicon Channel

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2003, Pages 131-132

  Krivokapic, Z ^a   Maszara, W ^a   Arasnia, F ^a   Paton, E ^a   Kim, Y ^b   Washington, L ^b   Zhao, E ^a   Chan, J ^a   Zhang, J ^a   Marathe, A ^a   Lin, M R ^a  

^a ADVANCED MICRO DEVICES   (United States)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRON MOBILITY; MOS DEVICES; PERMITTIVITY; POLYSILICON; TRANSMISSION ELECTRON MICROSCOPY; GATE DIELECTRICS; HOLE MOBILITY;

GATE DIELECTRICS;

SILICON ON INSULATOR TECHNOLOGY; SILICON;

DRIVE CURRENTS; ELECTRONS AND HOLES; FULLY DEPLETED; FULLY-DEPLETED SILICON ON ISULATOR; GATE-LEAKAGE; METAL-GATE; MOBILITY; PERFORMANCE; SILICON CHANNEL; SINGLE GATES;

EID: 0141761521     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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5. W. Maszara et al., IEDM 2002, p. 367
6. Y.K. Choi et al., Symp. on VLSI Technology 2001, p. 19
7. K. Uchida et al., IEDM 2002, p.4
8. Z. Ren et al., IEDM 2002, p.51
9. D. Esseni et al., IEDM 2002, p.719