Non-Classical CMOS Device Design

IEEE International SOI Conference

Volumn , Issue , 2003, Pages 155-157

  Trivedi, V P ^a   Fossum, J G ^a   Vandooren, A ^b  

^a UNIVERSITY OF FLORIDA   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); POLYSILICON; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

DOPING DENSITY;

CMOS INTEGRATED CIRCUITS;

EID: 0142248009     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/soi.2003.1242935     Document Type: Conference Paper

References (6)

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3. P. C. Yeh, et al., IEEE T-ED, vol. 42, p. 1605, Sept. 1995.
4. L. Ge, et al., IEEE T-ED, vol. 49, p. 287, Feb. 2002.
5. UFDG-2.3 MOSFET Model User's Guide, J. G. Fossum, Ed., Univ. Florida, Gainesville, Apr. 2003
6. L. Ge, et al., IEEE T-ED, vol. 48, p. 2074, Sept. 2001.