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Volumn 531, Issue 3, 2003, Pages 295-303

Atomic scale characterization of oxidized 6H-SiC(1 1 2̄ 0) surfaces

(3) Hoshino, Y a Matsumoto, S a Kido, Y a

Author keywords

Low index single crystal surfaces; Medium energy ion scattering (MEIS); Oxygen; Semiconducting surfaces; Silicon carbide; Surface stress; Synchrotron radiation photoelectron spectroscopy

Indexed keywords

IONS; OXIDATION; SINGLE CRYSTALS; STRAIN; SYNCHROTRON RADIATION;

MEDIUM ENERGY ION SCATTERING (MEIS);

SILICON CARBIDE;

EID: 0038581110 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(03)00562-4 Document Type: Article

Times cited : (10)

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