A comparative photoemission study of polar and nonpolar SiC surfaces oxidized in N2O

Surface Science

Volumn 552, Issue 1-3, 2004, Pages 251-259

  Johansson, L I ^a   Virojanadara, C ^a   Eickhoff, Th ^b,c   Drube, W ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b DESY   (Germany)

^c Roentec GmbH   (Germany)

Author keywords

Angle resolved photoemission; Nitrogen oxides; Oxidation; Oxygen; Silicon carbide

Indexed keywords

ANNEALING; ELECTRON EMISSION; GROWTH (MATERIALS); INTERFACES (MATERIALS); NITROGEN OXIDES; OXIDATION; PHOTOEMISSION; SENSITIVITY ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGLE RESOLVED PHOTOEMISSION; AUGER TRANSITIONS;

SILICON CARBIDE;

EID: 1342285618     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.01.024     Document Type: Article

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