Conductance, surface traps, and passivation in doped silicon nanowires

Nano Letters

Volumn 6, Issue 12, 2006, Pages 2674-2678

  Fernandez Serra M V ^a   Adessi, Ch ^a   Blase, X ^a  

^a UNIVERSITÉ LYON 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; ELECTRIC CONDUCTANCE; ELECTRON TRAPS; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

AB INITIO CALCULATIONS; SILICON NANOWIRES; SURFACE TRAPS;

NANOTUBES;

EID: 33846347300     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl0614258     Document Type: Article

References (60)

1. Morales, A. M.; Lieber, C. M. Science 1998, 279, 208-211.
2. Ma, D. D. D.; Lee, C. S.; Au, F. C. K.; Tong, S. Y.; Lee, S. T. Science 2003, 299, 1874-1877.
3. Cui, Y.; Lauhon, L. J.; Gudiksen, M. S.;Wang, J.; Lieber, C. M. Appl. Phys. Lett. 2001, 68, 2214.
4. Huang, Y.; Duan, X.; Wei, Q.; Lieber, C. M. Science 2001, 291, 630-633.
5. Martensson, T.; Carlberg, P.; Borgstrom, M.; Montelius, L.; Seifert, W.; Samuelson, L. Nano Lett. 2004, 4, 699-702.
6. Jin, S.; Whang, D.; McAlpine, M. C.; Friedman, R. S.; Wu, Y.; Lieber, C. M. Nano Lett. 2004, 4, 915-919.
7. Friedman, R. S.; McAlpine, M. C.; Ricketts, D. S.; Ham, D.; Lieber, C. M. Nature 2005, 434, 1085.
8. Cui, Y.; Lieber, C. M. Science 2001, 291, 851-853.
9. Wang, D.; Sheriff, B.; Heath, J. R. Nano Lett. 2006, 6, 1096-1100.
10. Cui, Y.; Zhong, Z.; Wang, D.; Wang, W. U.; Lieber, C. M. Nano Lett. 2003, 3, 149-152.
11. Wu, Y.; Cui, Y.; Huynh, L.; Barrelet, C. J.; Bell, D. C.; Lieber, C. M. Nano Lett. 2004, 4, 433-436.
12. Duan, X.; Niu C.; Sahi, V.; Chen, J.; Wallace, P.; Empe-docles, S.; Goldman, J. L. Nature 2003, 425, 274-278.
13. Cui, Y.; Wei, Q.; Park, H.; Lieber, C. M. Science 2001, 293, 1289.
14. Wang, W.; et al. Proc. Natl. Acad. Sci. U.S.A. 2005, 102, 3208.
15. Ismail-Beigi, S.; Arias, T. Phys. Rev. B 1998, 57, 11923.
16. Kobayashi, K. Phys. Rev. B 2004, 69, 115338.
17. Rurali, R.; Lorente, N. Phys. Rev. Lett. 2005, 94, 026805.
18. Zhao, Y.; Yakobson, B. I. Phys. Rev. Lett. 2003, 91, 035501.
19. Kagimura, R.; Nunes, R. W.; Chacham, H. Phys. Rev. Lett. 2005, 95, 115502.
20. Chan, T.-L.; Ciobanu, C. V.; Chuang, F.-C.; Lu, N.; Wang, C.-Z.; Ho, K.-M. Nano Lett. 2006, 6, 277-281.
21. Bockelmann, U.; Bastard, G. Phys. Rev. B 1992, 45, 1688-1699.
22. Yeh, Chin-Yu; Zhang, S. B.; Zunger, A. Phys. Rev. B 1994, 50, 14405-14415.
23. Niquet, Y. M.; Lherbier, A.; Quang, N. H.; Fernandez-Serra, M. V.; Blase, X.; Delerue, C. Phys. Rev. B 2006, 73, 165319.
24. Read, A. J.; Needs, R. J.; Nash, K. J.; Canham, L. T.; Calcott, P. D. J.; Qteish, A. Phys. Rev. Lett. 1992, 69, 1232-1235.
25. Buda, F.; Kohanoff, J.; Parrinello, M. Phys. Rev. Lett. 1992, 69, 1272.
26. Delley, B.; Steigmeier, E. F. App. Phys. Lett. 1995, 67, 2370-2372.
27. Zhao, X. et al. Phys. Rev. Lett. 2004, 92, 236805.
28. Singh, A. K.; Kumar, V.; Note, R.; Kuwazoe, Y. Nano Lett. 2006, 6, 920-925.
29. Cui, Y.; Duan, X.; Hu, J.; Lieber, C. M. J. Phys. Chem. B 2000, 104, 5213.
30. Ma, D.D.D.; Lee, C. S.; Lee, S. T. Appl. Phys. Lett. 2001, 79, 2468.
31. Lew, K.K. et al. Appl. Phys. Lett. 2004, 85, 3101.
32. Byon, K.; Tham, D.; Fisher, J. E.; Johnson, A. T. Appl. Phys. Lett. 2005, 87, 193104.
33. Choi, H. J.; Ihm, J.; Louie, S. G.; Cohen, M. L. Phys. Rev. Lett. 2000, 84, 2917.
34. Kaun, C.-C.; et al. Phys. Rev. B 2002, 65, 205416.
35. Latil, S.; Roche, S.; Mayou, D.; Charlier, J.-C. Phys. Rev. Lett. 2004, 92, 256805.
36. Adessi, Ch.; Roche, S.; Blase, X. Phys. Rev. B 2006, 73, 125414.
37. Avriller, R.; Latil, S.; Triozon, F.; Blase, X.; Roche, S. Phys. Rev. B 2006, 74, 121406 R.
38. Fernández-Serra, M. V.; Adessi, C.; Blase, X. Phys. Rev. Lett. 2006, 96, 166805.
39. Nehari, K.; Cavassilas, N.; Autran, J. L.; Bescond, M.; Munteanu, D.; Lannoo, M. Solid State Electron. 2006, 50, 716-721.
40. Sundaram, V. S.; Mizel, A. J. Phys.: Condens. Matter 2004, 16, 4697.
41. Wang, J.; Polizzi, E.; Ghosh, A.; Datta, S.; Lundstrom, M. Appl. Phys. Lett. 2005, 87, 043101.
42. Gold, A.; Ghazali, A. Phys. Rev. B 1990, 41, 7626.
43. Wang, J.; Polizzi, E.; Lundstrom, M. J. Appl. Phys. 2004, 96, 2192-2203.
44. Das Kunal, K.; Mizel, A. J. Phys.: Condens. Matter 2004, 19, 6675.
45. Perdew, J. P.; et al. Phys. Rev. Lett. 1996, 77, 3865.
46. Troullier, N.; Martins, J.-L. Phys. Rev. B 1991, 43, 1993.
47. Soler, J.-M.; et al. J. Phys. Condens. Matter 2002, 14, 2745.
48. Rocha, A. R.; Garcia-Suarez, V.; Bailey; S.; Lambert: C.; Ferrer; J.; Sanvito; S. Phys. Rev. B 2006, 73, 085414.
49. Nardelli, M. B.; Fattebert, J.-L.; Bernholc, J. Phys. Rev. B 2001, 64, 245423.
50. In Figure 2, the P-induced donor in-gap levels cannot be seen, as the eDOS is calculated from the trace of the density matrix built from the propagating states. As in-gap states are strictly localized. not propagating, they cannot be seen in this "transport-related" density of states. This is not the case in Figure 3 where stationary Bloch states are used.
51. Baumer, R. P.; et al. Appl. Phys. Lett. 2004, 85, 943.
52. Wang, R. P. Appl. Phys. Lett. 2006, 88, 142104.
53. Very similar results are obtained for the p orbitals on-site energies. Such on-site energies are directly extracted from the diagonal of the ab initio Hamiltonian.
54. Rignanese, G.-M.; Pasquarello, A.; Charlier, J.-C.; Gonze, X.; Car, R. Phys. Rev. Lett. 1997, 79, 5174.
55. Blomquist, T.; Kirczenow, G. Nano Lett. 2006, 6, 61-65.
56. 2 configuration as the dangling bond is now completely empty.
57. Zheng, G.; Lu, W.; Jin, S.; Lieber, C. M. Adv. Mater. 2004, 15, 1890.
58. Landman, U.; Barnett, R.; Scherbakov, A. G.; Avouris, Ph. Phys. Rev. Lett. 2000, 85, 1958.
59. Zhong, J.; Stocks, G. M. Nano Lett. 2006, 6, 128-132.
60. Xiang, J.; Lu, W.; Hu, Y.; Yan, H.; Lieber, C. M. Nature 2006, 441, 489.