Metal-semiconductor nanocontacts: Silicon nanowires

Physical Review Letters

Volumn 85, Issue 9, 2000, Pages 1958-1961

  Landman, Uzi ^a   Barnett, Robert N ^a   Scherbakov, Andrew G ^a   Avouris, Phaedon ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONDUCTANCE; ELECTRODES; ELECTRONIC STRUCTURE; ENERGY GAP; NANOSTRUCTURED MATERIALS; PASSIVATION; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR DOPING; TRANSPORT PROPERTIES;

SCHOTTKY BARRIER; SILICON NANOWIRES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 6744229784     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.85.1958     Document Type: Article

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