Effects of morphology and doping on the electronic and structural properties of hydrogenated silicon nanowires

Nano Letters

Volumn 6, Issue 5, 2006, Pages 920-925

  Singh, Abhishek Kumar ^a   Kumar, Vijay ^a,b,c   Note, Ryunosuke ^a   Kawazoe, Yoshiyuki ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c Dr Vijay Kumar Foundation   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ELECTRONIC PROPERTIES; ENERGY GAP; HYDROGENATION; LASERS; MORPHOLOGY; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR DOPING;

HYDROGEN CONCENTRATION; NANOWIRES; QUANTUM CONFINEMENT; STRUCTURAL PROPERTIES;

SILICON;

EID: 33744794927     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl052505z     Document Type: Article

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