Magic structures of H-passivated (110) silicon nanowires

Nano Letters

Volumn 6, Issue 2, 2006, Pages 277-281

  Chan, Tzu Liang ^a   Ciobanu, Cristian V ^b   Chuang, Feng Chuan ^a   Lu, Ning ^a   Wang, Cai Zhuang ^a   Ho, Kai Ming ^a  

^a IOWA STATE UNIVERSITY   (United States)

^b Department of Geology and Geological Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

H-PASSIVATED (110) SILICON NANOWIRES; HEXAGONAL WIRES; SILICON NANOWIRES;

ATOMIC PHYSICS; GENETIC ALGORITHMS; HYDROGENATION; NUMERICAL METHODS; SILICON;

NANOSTRUCTURED MATERIALS;

HYDROGEN; NANOTUBE; SILICON;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; PARTICLE SIZE; SENSITIVITY AND SPECIFICITY; SURFACE PROPERTY;

HYDROGEN; MODELS, CHEMICAL; NANOTUBES; PARTICLE SIZE; SENSITIVITY AND SPECIFICITY; SILICON; SURFACE PROPERTIES;

EID: 33644889702     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl0522633     Document Type: Article

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