Modeling the silicon-hafnia interface

Materials Science in Semiconductor Processing

Volumn 9, Issue 6, 2006, Pages 928-933

  Nieminen, R M ^a   Hakala, M H ^a   Foster, A S ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

Computational modelling; High k oxides; Interfaces; Leakage current

Indexed keywords

ANNEALING; ELECTRONIC PROPERTIES; FINITE ELEMENT METHOD; GREEN'S FUNCTION; HAFNIUM; LEAKAGE CURRENTS; MOLECULAR DYNAMICS; SILICON; STOICHIOMETRY;

COMPUTATIONAL MODELING; FIRST PRINCIPLES CALCULATIONS; HIGH-K OXIDES; SILICON HAFNIA INTERFACES;

INTERFACES (MATERIALS);

EID: 33846061707     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.10.010     Document Type: Article

References (34)

1. Kingon A.I., Maria J.P., and Streiffer S.K. Nature 406 (2000) 1032
2. In: Houssa M. (Ed). High-k gate dielectrics (2003), IOP, London
3. Stoneham A.M., Gavartin J.L., and Shluger A.L. J Phys Condens Matter 17 (2005) S2027
4. Huff H.R., Hou A., Lim C., Kim Y., Barnett J., Bersuker G., Brown GA., Young CD., Zeitzoft PM., and Gutt J. Microelectron Eng 69 (2003) 152-167
5. Wilk G.D., Wallace R.M., and Anthony J.M. J Appl Phys 89 (2001) 5243
6. Young CD, Bersuker G, Brown GA, Lysaght P, Zeitzoff P, Murto RW, Huff HR. In: IEEE international reliability physics symposium; 2004. p. 597.
7. Bersuker G., Zeitzoff P., Brown G., and Huff H.R. Mater Today 2 (2004) 26
8. Afanas'ev V.V., and Stesmans A. J Appl Phys 95 (2004) 2518
9. Foster A.S., Gejo F.L., Shluger A.L., and Nieminen R.M. Phys Rev B 65 (2002) 174117
10. Choi R., Song S.C., Young C.D., Bersuker G., and Lee B.H. Appl Phys Lett 87 (2005) 122901
11. Houssa M., Gendt S.D., Autran J.L., Groeseneken G., and Heyns M.M. Appl Phys Lett 85 (2004) 2101
12. Gavartin J.L., Foster A.S., Bersuker G.I., Shluger A.L., and Nieminen R.M. J Appl Phys 97 (2005) 053704
13. Fiorentini V., and Gullery G. Phys Rev Lett 89 (2002) 266101
14. Fonseca L.R.C., Demkov A.A., and Knizhnik A. Phys Status Solidi (b) 239 (2003) 48
15. Peacock P.W., and Robertson J. Phys Rev Lett 92 (2004) 057601
16. Puthenkovilakam R., and Chang J.P. J Appl Phys 96 (2004) 2701
17. O'Sullivan B.J., Hurley P.K., O'Connor E., Modreanu M., Roussel H., Jimenez C., et al. J Electrochem Soc 151 (2004) G493
18. Hakala M.H., Foster A.S., Gavartin J.L., Havu P., Puska M.J., and Nieminen R.M. J Appl Phys 100 (2006) 043708
19. Junquera J., Paz O., Sánchez-Portal D., and Artacho E. Phys Rev B 64 (2001) 235111
20. Soler J.M., Artacho E., Gale J.D., García A., Junquera J., Ordejón P., et al. J Phys Condens Matter 14 (2002) 2745
21. Perdew J.P., Burke K., and Ernzerhof M. Phys Rev Lett 77 (1996) 3865
22. Demkov A.A., Fonseca L.R.C., Verret E., Tomfohr J., and Sankey O.F. Phys Rev B 71 (2005) 195306
23. Xue Y., Patta S., and Ratner M.A. Chem Phys 281 (2002) 151
24. Havu P., Havu V., Puska M.J., and Nieminen R.M. Phys Rev B 69 (2004) 115325
25. Havu P., Havu V., Puska M.J., Hakala M.H., Foster A.S., and Nieminen R.M. J Phys Chem 124 (2006) 054707
26. Nitzan A. Annu Rev Phys Chem 52 (2001) 681
27. Först C.J., Ashman C.R., Schwarz K., and Blöchl P.E. Nature 427 (2004) 53
28. Gavartin J.L., Fonseca L., Bersuker G., and Shluger A.L. Microelectron Eng 80 (2005) 412
29. Wang S.J., Lim P.C., Huan A.C.H., Liu C.L., Chai J.W., Chow S.Y., et al. Appl Phys Lett 82 (2003) 2047
30. Cho D.Y., Park K.-S., Choi B.-H., Oh S.-J., Chang Y.J., Kim D.H., et al. Appl Phys Lett 86 (2004) 041913
31. Lee B.H., Kang L., Nieh R., Qi W.-J., and Lee J.C. Appl Phys Lett 76 (2000) 1926
32. Yamamoto K., Hayashi S., Niwa M., Asai M., Horii S., and Miya H. Appl Phys Lett 83 (2003) 2229
33. Takeuchi H., Ha D., and King T.-J. J Vac Sci Technol A 22 (2004) 1337
34. Foster A.S., Shluger A.L., and Nieminen R.M. Phys Rev Lett 89 (2002) 225901