Hydrostatic pressure dependence of polarization-induced interface charge in AlGaN/GaN heterostructures determined by means of capacitance-voltage characterization

Journal of Applied Physics

Volumn 100, Issue 11, 2006, Pages

  Franssen, G ^a   Plesiewicz, J A ^a   Dmowski, L H ^a   Prystawko, P ^a   Suski, T ^a   Krupczynski W ^b   Jachymek, R ^b   Perlin, P ^c   Leszczynski M ^c  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b TOPGAN LTD   (Poland)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; HYDROSTATIC PRESSURE; INTERFACES (MATERIALS); INTERMETALLICS; POLARIZATION;

INTERFACE CHARGE; INTERFACE TRAP; PARALLEL CONDUCTION; TWO DIMENSIONAL ELECTRON GAS (2DEG);

HETEROJUNCTIONS;

EID: 33845804842     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2392719     Document Type: Article

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