A pressure-tuned blue-violet InGaN/GaN laser diode grown on bulk GaN crystal

Applied Physics Letters

Volumn 84, Issue 8, 2004, Pages 1236-1238

  Suski, T ^a   Franssen, G ^a   Perlin, P ^a   Bohdan, R ^a   Bercha, A ^a,b   Adamiec, P ^a,c   Dybala, F ^a,c   Trzeciakowski, W ^a   Prystawko, P ^a   Leszczynski M ^a   Grzegory, I ^a   Porowski, S ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b UZHGOROD NATIONAL UNIVERSITY   (Ukraine)

^c WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; GALLIUM NITRIDE; GROWTH (MATERIALS); HYDROSTATIC PRESSING; LIGHT EMISSION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

NITRIDE BASED DEVICE STRUCTURES; QUANTUM CONFINEMENT;

SEMICONDUCTOR LASERS;

EID: 12144289369     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1649801     Document Type: Article

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