Simulation of the capacitance-voltage characteristics of a single-quantum-well structure based on the self-consistent solution of the Schrödinger and Poisson equations

Journal of Applied Physics

Volumn 80, Issue 2, 1996, Pages 864-871

  Brounkov, P N ^a,b   Benyattou, T ^a   Guillot, G ^a  

^a UNIVERSITÉ DE LYON   (France)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001442584     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362895     Document Type: Article

References (27)

1. H. Kroemer, W. Y. Chien, J. C. Harris, Jr., and D. D. Edwall, Appl. Phys. Lett. 36, 295 (1980).
2. R. People, K. W. Wecht, K. Alavi, and A. Y. Cho, Appl. Phys. Lett. 43, 118 (1983).
3. J. E. A. Whiteaway, IEE Proc. 130, Part I, 165 (1983).
4. J. H. Zhao, A. Z. Li, T. E. Schlesinger, and A. G. Milnes, J. Electron. Mater. 17, 255 (1988).
5. A. A. van Gorkum and K. Yamaguchi, IEEE Trans. Electron Devices ED-36, 410 (1989).
6. X. Letartre, D. Stievenard, and E. Barbier, J. Appl. Phys. 69, 7912 (1991).
7. J. M. Lopez-Villegas, P. Roura, J. Bosch, J. R. Morante, A. Georgakilas, and K. Zekentes, J. Electrochem. Soc. 140, 1492 (1993).
8. S. Subramanian, B. M. Arora, A. K. Srivastava, G. Fernandes, and S. Banerjee, J. Appl. Phys. 74, 7618 (1993).
9. Y. Kim, M.-S. Kim, and S.-K. Min, Appl. Phys. Lett. 62, 741 (1993).
10. C. E. Stutz, B. Jogai, D. C. Look, J. M. Ballingall, and T. J. Rogers, Appl. Phys. Lett. 64, 2703 (1994).
11. K. Kreher, Phys. Status Solidi A 135, 597 (1993).
12. E. F. Schubert, R. F. Kopf, J. M. Kuo, H. S. Luftman, and P. A. Garbinski, Appl. Phys. Lett. 57, 497 (1990).
13. M. Sundaram, S. J. Allen, Jr., and A. C. Gossard, J. Appl. Phys. 76, 1003 (1994).
14. D. P. Kennedy, P. C. Murley, and W. Kleinfelder, IBM J. Res. Dev. 12, 399 (1968).
15. W. C. Johnson and P. T. Panousis, IEEE Trans. Electron Devices ED-18, 965 (1971).
16. F. Stern and S. Das Sarma, Phys. Rev. B 30, 840 (1984).
17. K. Yokoyama and K. Hess, Phys. Rev. B 33, 5595 (1986).
18. A. M. Cruz Serra and H. Abreu Santos, J. Appl. Phys. 70, 2734 (1991).
19. A. Abou-Elnour and K. Schuenemann, J. Appl. Phys. 74, 3273 (1993).
20. W. Schockley, Electrons and Holes in Semiconductors, (Van Nostrand, Princeton, NJ, 1950).
21. D. Bednarczyk and J. Bednarczyk, Phys. Lett. A 64, 409 (1978).
22. L. C. Kimerling, J. Appl. Phys. 45, 1839 (1974).
23. J. D. Wiley and G. L. Miller, IEEE Trans. Electron Devices ED-22, 265 (1975).
24. W. R. Hong, S. Dhar, P. K. Bhattacharya, and A. Chin, J. Electron. Mater. 16, 271 (1987).
25. J. K. Luo, H. Thomas, S. A. Clark, and R. H. Williams, J. Appl. Phys. 74, 6726 (1993).
26. P. N. Brounkov, T. Benyattou, G. Guillot, and S. A. Clark, J. Appl. Phys. 77, 240 (1995).
27. J. Y. Marzin, Ph.D. thesis, Université Paris VII, 1987.