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Chemical Vapor Deposition

Volumn 12, Issue 8-9, 2006, Pages 489-494

Homoepitaxial growth on a 4H-SiC C-face substrate

(4) Kojima, Kazutoshi a Kuroda, Satoshi a Okumura, Hajime a Arai, Kazuo a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

C face; Doping; Homoepitaxial growth; Off angle; SiC

Indexed keywords

CARBON; DEFECTS; EPITAXIAL GROWTH; SUBSTRATES; SURFACE PHENOMENA;

EPITAXIAL LAYERS; HOMOEPITAXIAL GROWTH; SITE COMPETITION PHENOMENON; SURFACE IMPERFECTIONS;

SILICON CARBIDE;

EID: 33845667372 PISSN: 09481907 EISSN: 15213862 Source Type: Journal
DOI: 10.1002/cvde.200506463 Document Type: Article

Times cited : (9)

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