Effect of C/Si ratio on spiral growth on 6H-SiC (0001)

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 7 B, 2003, Pages

  Nakamura, Shun Ichi ^a,b   Kimoto, Tsunenobu ^a   Matsunami, Hiroyuki ^a  

^a KYOTO UNIVERSITY   (Japan)

^b ASTEM RI   (Japan)

Author keywords

Atomic force microscopy (AFM); Chemical vapor deposition (CVD); Silicon carbide (SiC); Spiral growth; Step flow growth

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBON; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; SILICON; STACKING FAULTS;

CARBON TO SILICON RATIO; SCREW DISLOCATION; SPIRAL GROWTH; STEP-FLOW GROWTH;

SILICON CARBIDE;

EID: 0141829758     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l846     Document Type: Letter

References (12)

1. I. Kamata, H. Tsuchida, T. Jikimoto and K. Izumi: Jpn. J. Appl. Phys. 41 (2002) L1137.
2. S. Nakamura, T. Kimoto and H. Matsunami: to be published in J. Cryst. Growth.
3. H. Matsunami, K. Shibahara, N. Kuroda, W. S. Yoo and S. Nishino: Springer Proc. in Physics 34 (1989) 34.
4. H. Matsunami and T. Kimoto: Mater. Sci. & Eng. R20 (1997) 125.
5. T. Kimoto, H. Nishino, W. S. Yoo and H. Matsunami: J. Appl. Phys. 73 (1993) 726.
6. J. A. Powell, P. G. Neudeck, A. J. Trunek, G. M. Beheim, L. G. Matus, R. W. Hoffmann, Jr. and L. J. Keys: Appl. Phys. Lett. 77 (2000) 1449.
7. J. A. Powell and D. J. Larkin: Phys. Status Solidi (b) 202 (1997) 529.
8. A. R. Verma: Philos. Mag. 42 (1951) 1005.
9. T. Kimoto and H. Matsunami: J. Appl. Phys. 78 (1995) 3132; The absolute values suggested in the paper have been outdated by ref. 2, but the tendency should be correct.
10. I. V. Markov: Crystal Growth for Beginners (World Scientific, Singapore, 1995) Chap. 3, p. 179.
11. V. Ramachandran, M. F. Brady, A. R. Smith, R. M. Feenstra and D. W. Greve: J. Electron. Mater. 27 (1998) 308.
12. T. Kimoto and H. Matsunami: J. Appl. Phys. 76 (1994) 7322.