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Volumn 483-485, Issue , 2005, Pages 141-146
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Epitaxial growth of n-type 4H-SiC on 3" wafers for power devices
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Author keywords
Epitaxial layers; Hot wall CVD; Multi wafer CVD; SiC; Silicon carbide
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CHEMICAL VAPOR DEPOSITION;
EPITAXIAL GROWTH;
EPITAXIAL LAYERS;
SURFACE MORPHOLOGY;
CRYSTAL QUALITY;
MULTI-WAFER CVD;
POWER DEVICES;
THICKNESS MAPPINGS;
SILICON CARBIDE;
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EID: 33747099099
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/0-87849-963-6.141 Document Type: Conference Paper |
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Times cited : (23)
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References (5)
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