Control of surface morphologies for epitaxial growth on low off-angle 4H-SiC (0001) substrates

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 135-138

  Masahara, K ^a   Kushibe, M ^a   Ohno, H ^a   Kojima, K ^a   Takahashi, T ^b   Ishida, Y ^b   Suzuki, T ^a   Tanaka, T ^a   Yoshida, S ^b   Arai, K ^b  

^a R and D Assoc Fut Electron Devices   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; CRYSTAL ORIENTATION; DOPING (ADDITIVES); EPITAXIAL GROWTH; ETCHING; MORPHOLOGY; PRESSURE EFFECTS; PROPANE; SURFACES; THERMAL EFFECTS;

HOT WALL TYPE REACTOR; LOW-OFF ANGLE SUBSTRATES; PRE-GROWTH ETCHING;

SILICON CARBIDE;

EID: 14344280080     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.135     Document Type: Article

References (3)

1. K. Fukuda et al., Materials Science Forum Vols. 338-342 (2000) p. 1283.
2. T. Kimoto et al., J. Appl. Phys. Vol.75 (2), No. 15 (1994) p. 850.
3. C. Hallin et al., J. Cryst. Growth 181 (1997) p. 241