Near-ballistic transport and current-voltage characteristics of a GaAs/ AlGaAs heterojunction field effect transistor under the influence of impurity scattering

Journal of Applied Physics

Volumn 82, Issue 10, 1997, Pages 5227-5230

  Fu, Y ^a   Willander, M ^a  

^a UNIVERSITY OF GOTHENBURG   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC TRANSPORTS; CURRENT REDUCTION; CURRENT-VOLTAGE RELATIONS; ELECTRON TRANSMISSION COEFFICIENTS; GAAS/ALGAAS; HETERO INTERFACES; HETEROJUNCTION FIELD EFFECT TRANSISTOR; HETEROJUNCTION TRANSISTORS; IMPURITY SCATTERING; IONIZED IMPURITIES; OPTIMAL CURRENT; SCATTERING CENTERS; SOURCE-DRAIN; SOURCE-DRAIN CURRENT; SPATIAL CONFIGURATION; TRANSMISSION CONDITIONS;

BALLISTICS; BIAS VOLTAGE; DRAIN CURRENT; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; IMPURITIES; QUANTUM CHEMISTRY; TRANSPORT PROPERTIES; CALCULATIONS; CRYSTAL IMPURITIES; CURRENT VOLTAGE CHARACTERISTICS; ELECTROMAGNETIC WAVE TRANSMISSION; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS); NUMERICAL METHODS; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ROUGHNESS;

CURRENT VOLTAGE CHARACTERISTICS; FIELD EFFECT TRANSISTORS;

ELECTRON BALLISTIC TRANSPORT; ELECTRON TRANSMISSION COEFFICIENT; IMPURITY SCATTERING; INTERFACE ROUGHNESS; QUASI TWO DIMENSIONAL ELECTRON GAS; SOURCE DRAIN CURRENT;

EID: 0031272730     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366387     Document Type: Article

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