Control of crystallographic structure of aluminum nitride films prepared by magnetron sputtering

Integrated Ferroelectrics

Volumn 57, Issue , 2003, Pages 1201-1211

  Leung, T T ^a   Ong, C W ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

AlN films; Magnetron sputtering; Nearly amorphous; Preferential orientation

Indexed keywords

AMORPHOUS FILMS; CRYSTAL STRUCTURE; LATTICE VIBRATIONS; MAGNETRON SPUTTERING; POLYCRYSTALLINE MATERIALS; SILICON; VACUUM;

ALUMINUM NITRIDE FILMS; LATTICE MATCHING; THERMAL ENERGY;

ALUMINUM NITRIDE;

EID: 33751263419     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580390259669     Document Type: Article

References (36)

1. J. K. Liu, K. M. Lakin, and K. L. Wang, J. Appl. Phys. 46, 3703 (1975).
2. G. F. Iriarte, F. Engelmark, and I. V. Katardjiev, J. Mater. Res. 17, 1469 (2002).
3. M. A. Dubois and P. Muralt, Appl. Phys. Letts. 74, 3032 (1999).
4. K. M. Lakin, G. R. Kline, and K. T. McCarron, IEEE Trans. Microwave Theory Tech. 43, 2933 (1995).
5. D. Liufu and K. C. Kao, J. Vac. Sci. Technol. A 16, 2360 (1998).
6. I. Ivanov, L. Hultman, J. Järrendahl, P. Martensson, J.-E. Sundgren, B. Hjörvarsson, and J. E. Greene, J. Appl. Phys. 78, 5721 (1995).
7. C. C. Cheng, Y. C. Chen, H. J. Wang, and W. R. Chen, J. Vac. Technol. A 14, 2238 (1996).
8. C. C. Cheng, Y. C. Chen, R. C. Horng, H. J. Wang, W. R. Chen, and E. K. Lai, J. Vac. Technol. A 16, 3335 (1998).
9. R. N. Tait and A. Mirfazli, J. Vac. Sci. Technol. A 19, 1586 (2001).
10. H. Cheng, Y. Sun, and P. Hing, Surf. Coat. Technol. 166, 231 (2003).
11. M. B. Assouar, O. Elmazria, L. Le Brizoual, and O. Alnot, Diamond and Related Materials 11, 413 (2002).
12. Y. Huttel, H. Gomez, A. Cebollada, G. Armelles, and M. I. Alonso, J. Cryst. Growth. 242, 116 (2002).
13. E. Dogheche, D. Rémiens, A. Boudrioua, and J. C. Loulergue, Appl. Phys. Letts. 74, 1209 (1999).
14. K. Jagannadham, A. K. Sharma, Q. Wei, R. Kalyanraman, and J. Narayan, J. Vac. Sci. Technol. A 16, 2804 (1998).
15. H. P. Loebl, M. Klee, C. Metzmacher, W. Brand, R. Milsom, and P. Lok, Mater. Chem. Phys. 79, 143 (2003).
16. K. Kusaka, D. Taniguchi, T. Hanabusa, and K. Tominaga, Vacuum 66, 441 (2002).
17. L. S. Klingbeil and M. R. Wilson, Solid-State Electr. 41, 429 (1997).
18. F. Randriamora, J. C. Bruyère, and A. Deneuville, Mater. Sci. Eng. B 50, 272 (1997).
19. P. W. Wang, S. Sui, W. Wang, and W. Durrer, Thin Solid Films 295, 142 (1997).
20. P. Hsieh, R. Reif, and B. Cunningham, Mat. Res. Soc. Symp. Proc. 546, 165 (1999).
21. H. L. Kao, P. J. Shih, and C. H. Lai, Jpn. J. Appl. Phys. 38, 1526 (1999).
22. J. W. Kim, H. K. Kim, and J. Korean, Phys. Soc. 32, S1664 (1998).
23. J. W. Kim, C. H. Chang, and Y. M. Koo, Mater. Lett. 34, 19 (1998).
24. B. Wang, Y. N. Zhao, and Z. He, Vacuum 48, 427 (1997).
25. H. C. Lee and J. Y. Lee, J. Mater. Sci. Mater. Electron. 8, 385 (1997).
26. H. C. Lee, G. H. Kim, S. K. Hong, K. Y. Lee, Y. J. Yong, C. H. Chun, and J. Y. Lee, Thin Solid Films 261, 148 (1995).
27. F. C. Stedile, I. J. R. Baumvol, W. H. Schreiner, and F. L. Freire, Jr., J. Vac. Sci. Technol. A 10, 3272 (1992).
28. J. A. Ruffner, P. G. Clem, B. A. Tuttle, D. Dimos, and D. M. Gonzales, Thin Solid Films 354, 256 (1999).
29. C. J. Sun, P. Kung, A. Saxler, H. Ohsato, K. Haritos, and M. Razeghi, J. Appl. Phys. 75, 3964 (1994).
30. W. J. Meng, J. Heremans, and Y. T. Cheng, Appl. Pltys. Lett. 59, 2097 (1991).
31. G. Wei, J. Zi, K. Zhang, and X. Xie, J. Appl. Phys. 82, 4693 (1997).
32. L. E. McNeil. M. Grimsditch, and R. H. French, J. Am. Ceram. Soc. 48, 7879 (1993).
33. H. Hofsäss, H. Feldermann, R. Merk, M. Sebastian, and C. Ronning, Appl. Phys. A 66, 153 (1998).
34. W. Zhang, R. Vargas, T. Goto, Y. Someno, and T. Hirai, Appl. Phys. Lett. 64, 1359 (1994).
35. H. Okano, N. Tanaka, Y. Takahashi, T. Tanaka, K. Shibata, and S. Nakano, Appl. Phys. Lett. 64, 166 (1994).
36. H. Okano, N. Tanaka, Y. Takahashi, T. Tanaka, K. Shibata, and S. Nakano, Jpn. J. Appl. Phys. 31, 3446 (1992).