Reactively sputtered aluminum nitride in GaAs processing

Solid-State Electronics

Volumn 41, Issue 3, 1997, Pages 429-433

  Klingbeil, L S ^a   Wilson, M R ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM COMPOUNDS; CHEMICAL VAPOR DEPOSITION; OPTIMIZATION; PARAMETER ESTIMATION; REACTIVE ION ETCHING; REDUCTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SPUTTER DEPOSITION;

ALUMINUM NITRIDE; WET ETCH REMOVAL;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031096672     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(96)00180-3     Document Type: Article

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