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Applied Physics Letters

Volumn 74, Issue 9, 1999, Pages 1209-1211

Growth and optical characterization of aluminum nitride thin films deposited on silicon by radio-frequency sputtering

(4) Dogheche, E a Remiens D a Boudrioua, A b Loulergue, J C b

a UNIVERSITÉ DE VALENCIENNES (France)

b UNIVERSITÉ DE LORRAINE (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; ELECTRIC FIELDS; FILM GROWTH; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; PRISMS; REFRACTIVE INDEX; SEMICONDUCTING SILICON; SUBSTRATES; TEMPERATURE; THIN FILMS;

ALUMINUM NITRIDE; PRISM COUPLING TECHNIQUE; RADIO FREQUENCY SPUTTERING; THERMAL ANNEALING;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0033092750 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.123501 Document Type: Article

Times cited : (28)

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