Epitaxial growth of AlN on sapphire (0 0 0 1) by sputtering: A structural, morphological and optical study

Journal of Crystal Growth

Volumn 242, Issue 1-2, 2002, Pages 116-123

  Huttel, Y ^a   Gomez, H ^a   Cebollada, A ^a   Armelles, G ^a   Alonso, M I ^b  

^a INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

A1. Atomic force microscopy; A1. X ray diffraction; A3. Epitaxy; B1. Nitrides; B1. Sapphire; B2. Dielectric materials

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; CONCENTRATION (PROCESS); CRYSTALLOGRAPHY; DIELECTRIC MATERIALS; MORPHOLOGY; NITROGEN; REFRACTIVE INDEX; SAPPHIRE; SPUTTER DEPOSITION; STRESSES; SURFACE ROUGHNESS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

NORMAL INCIDENCE REACTIVE SPUTTERING;

EPITAXIAL GROWTH;

EID: 0036643890     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01375-1     Document Type: Article

References (18)