Structural characterization of AlN thin film deposited on a single crystal of Al2O3(0001) substrate

Materials Letters

Volumn 34, Issue 1-2, 1998, Pages 19-22

  Kim, K H ^a   Chang, C H ^a   Koo, Y M ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Al2O3 substrate; AlN thin film; GID (grazing incidence X ray diffraction); Line profile analysis; Orientational relationship

Indexed keywords

ALUMINA; CRYSTAL ORIENTATION; DEPOSITION; RESIDUAL STRESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SINGLE CRYSTALS; SUBSTRATES; THIN FILMS; X RAY CRYSTALLOGRAPHY;

ALUMINUM NITRIDE; GRAZING INCIDENCE X RAY DIFFRACTION (GID); LINE PROFILE ANALYSIS;

SEMICONDUCTING FILMS;

EID: 0032001941     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(97)00127-4     Document Type: Article

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