Emerging nanoscale silicon devices taking advantage of nanostructure physics

IBM Journal of Research and Development

Volumn 50, Issue 4-5, 2006, Pages 411-418

  Hiramoto, Toshiro ^a   Saitoh, Masumi ^a   Tsutsui, Gen ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; QUANTUM ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE;

NANOSCALE SILICON DEVICES; QUANTUM EFFECTS; SINGLE-ELECTRON CHARGING EFFECTS;

SEMICONDUCTING SILICON;

EID: 33748519851     PISSN: 00188646     EISSN: 00188646     Source Type: Journal    
DOI: 10.1147/rd.504.0411     Document Type: Article

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