Extension of Coulomb blockade region by quantum confinement in the ultrasmall silicon dot in a single-hole transistor at room temperature

Applied Physics Letters

Volumn 84, Issue 16, 2004, Pages 3172-3174

  Saitoh, Masumi ^a   Hiramoto, Toshiro ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COULOMB BLOCKADE; ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON BEAM LITHOGRAPHY; ETCHING; MOSFET DEVICES; PRESSURE EFFECTS; QUANTUM THEORY; RESONANT TUNNELING; SEMICONDUCTOR QUANTUM DOTS;

NEGATIVE DIFFERENTIAL CONDUCTANCE (NDC); PEAK TO VALLEY CURRENT RATIO (PVCR); SINGLE ELECTRON TRANSISTORS (SET); SINGLE HOLE TRANSISTORS (SHT);

TRANSISTORS;

EID: 2442473699     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1710709     Document Type: Article

References (19)

1. Y. Takahashi, M. Nagase, H. Namatsu, K. Kurihara, K. Iwadate, Y. Nakajima, S. Horiguchi, K. Murase, and M. Tabe, Electron. Lett. 31, 136 (1995).
2. H. Ishikuro, T. Fujii, T. Saraya, G. Hashiguchi, T. Hiramoto, and T. Ikoma, Appl. Phys. Lett. 68, 3585 (1996).
3. H. Ishikuro and T. Hiramoto, Appl. Phys. Lett. 71, 3691 (1997).
4. L. Zhuang, L. Guo, and S. Y. Chou, Appl. Phys. Lett. 72, 1205 (1998).
5. M. Saitoh, N. Takahashi, H. Ishikuro, and T. Hiramoto, Jpn. J. Appl. Phys., Part 1 40, 2010 (2001).
6. K. Uchida, J. Koga, R. Ohba, and A. Toriumi, IEEE Trans. Electron Devices 50, 1623 (2003).
7. M. Saitoh, T. Murakami, and T. Hiramoto, IEEE Trans. Nanotechnol. 2, 241 (2003).
8. S. D. Lee, K. S. Park, J. W. Park, Y. M. Moon, J. B. Choi, K.-H. Yoo, and J. Kim, Appl. Phys. Lett. 77, 2355 (2000).
9. L. P. Rokhinson, L. J. Guo, S. Y. Chou, and D. C. Tsui, Phys. Rev. B 63, 035321 (2001).
10. M. Saitoh, T. Saito, T. Inukai, and T. Hiramoto, Appl. Phys. Lett. 79, 2025 (2001).
11. Y. Ono and Y. Takahashi, Jpn. J. Appl. Phys., Part 1 41, 2569 (2002).
12. M. Saitoh and T. Hiramoto, J. Appl. Phys. 91, 6725 (2002).
13. M. Saitoh and T. Hiramoto, Jpn. J. Appl. Phys., Part 2 43, L210 (2004).
14. M. Saitoh, H. Majima, and T. Hiramoto, Jpn. J. Appl. Phys., Part 1 42, 2426 (2003).
15. H. Ishikuro and T. Hiramoto, Appl. Phys. Lett. 74, 1126 (1999).
16. K. Shiraishi, M. Nagase, S. Horiguchi, H. Kageshima, M. Uematsu, Y. Takahashi, and K. Murase, Physica E (Amsterdam) 7, 337 (2000).
17. M. A. Reed, J. N. Randall, R. J. Aggarwal, R. J. Matyi, T. M. Moore, and A. E. Wetsel, Phys. Rev. Lett. 60, 535 (1988).
18. T. Fujisawa and S. Tarucha, Appl. Phys. Lett. 68, 526 (1996).
19. M. Saitoh and T. Hiramoto, IEICE Trans. Electron. E-84C, 1071 (2001).