Room-temperature operation of current switching circuit using integrated silicon single-hole transistors

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 8-11, 2005, Pages

  Saitoh, Masumi ^a   Harata, Hidehiro ^a,b   Hiramoto, Toshiro ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b CHUO UNIVERSITY   (Japan)

Author keywords

Coulomb blockade oscillation; Current switch; Integrated single electron transistor circuit; Room temperature; Silicon nanocrystals; Silicon single electron transistor; Silicon single hole transistor; Ultranarrow wire channel

Indexed keywords

COULOMB BLOCKADE; CRYSTALS; ELECTRIC CURRENTS; ETCHING; MOS DEVICES; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; OSCILLATIONS; OXIDATION; SEMICONDUCTING SILICON; TRANSISTORS;

COULOMB BLOCKADE OSCILLATION; CURRENT SWITCHES; INTEGRATED SINGLE-ELECTRON TRANSISTOR CIRCUIT; ROOM-TEMPERATURE; SILICON NANOCRYSTALS; SILICON SINGLE-ELECTRON TRANSISTORS; SILICON SINGLE-HOLE TRANSISTORS; ULTRANARROW WIRE CHANNELS;

SWITCHING CIRCUITS;

EID: 19944406505     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.L338     Document Type: Article

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