Impact of quantum mechanical effects on design of nano-scale narrow channel n- and p-type MOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 733-736

  Majima, H ^a   Saito, Y ^a   Hiramoto, T ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRON BEAM LITHOGRAPHY; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT MANUFACTURE; NANOTECHNOLOGY; QUANTUM THEORY; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

NANOSCALE NARROW CHANNEL MOSFET; QUANTUM MECHANICAL EFFECTS; STRUCTURAL PARAMETERS;

MOSFET DEVICES;

EID: 0035718380     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. Similar device structure has been fabricated by our group for single electron and hole transistor