Superior mobility characteristics in (110)-Oriented ultra thin body pMOSFETs with SOI thickness less than 6 nm

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 76-77

  Tsutsui, Gen ^a   Saitoh, Masumi ^a   Hiramoto, Toshiro ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MODULATION; SEMICONDUCTOR MATERIALS; SURFACES;

CARRIER CONFINEMENT; CHANNEL SURFACES; SUBBAND MODULATION;

MOSFET DEVICES;

EID: 33745173823     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469218     Document Type: Conference Paper

References (12)

1. D. Esseni et al., IEDM, p. 671, 2000.
2. K. Uchida et al., IEDM, p. 47, 2002.
3. Z. Ren et al., IEDM, p. 51, 2002.
4. G. Tsutsui et al., ISDRS, p. 361, 2003.
5. I. Aberg et al., IEDM, p. 173, 2004.
6. T. Tezuka et al., VLSI Symp., p. 198, 2004.
7. T. Sato et al., Phys. Rev. B, Vol. 4, p. 1950, 1971.
8. M. Chan et al., EDL, Vol. 15, p. 22, 1994.
9. M. V. Fischetti et al., JAP, Vol. 94, p. 1079, 2003.
10. T. Low et al., IEDM, p. 151, 2004.
11. S. Takagi et al., IEDM, p. 219, 1997.
12. H. Irie et al., IEDM, p. 225, 2004.