Electrical properties of high-quality ultrathin nitride/oxide stack dielectrics

IEEE Transactions on Electron Devices

Volumn 46, Issue 2, 1999, Pages 362-368

  Shi, Ying ^a   Wang, Xiewen ^a   Ma, Tso Ping ^a  

^a Yale University   (United States)

Author keywords

Dielectric films; Electron tunneling; Mosfet's; Ultra large scale integration

Indexed keywords

ELECTRON TUNNELING; LEAKAGE CURRENTS; MOSFET DEVICES; NITRIDES; OXIDES; ULSI CIRCUITS; VAPOR DEPOSITION;

JET VAPOR DEPOSITION (JVD);

DIELECTRIC FILMS;

EID: 0033080161     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.740903     Document Type: Article

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