Excess silicon at the silicon nitride/thermal oxide interface in oxide-nitride-oxide structures

Journal of Applied Physics

Volumn 86, Issue 6, 1999, Pages 3234-3240

  Gritsenko, V A ^a,c   Wong, Hei ^b   Xu, J B ^c   Kwok, R M ^c   Petrenko, I P ^a   Zaitsev, B A ^a   Morokov, Yu N ^d   Novikov, Yu N ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^c CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^d INSTITUTE OF COMPUTATIONAL TECHNOLOGIES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001663154     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371195     Document Type: Article

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