Optimization of 193 nm contact hole resists for 100 nm node

Journal of Photopolymer Science and Technology

Volumn 15, Issue 4, 2002, Pages 549-558

  Kudo, Takanori ^a   Alemy, Eric L ^a   Dammel, Ralph R ^a   Kim, Woo Kyu ^a   Lee, Sang Ho ^a   Masuda, Seiya ^a   McKenzie, Douglas ^a   Dalil Rahman, M ^a   Romano, Andrew ^a   Padmanaban, Munirathna ^a   Chun, Jun Sung ^b   Jung, Jae Chang ^c   Lee, Sung Koo ^c   Shin, Ki Soo ^c   Kim, Hyeong Soo ^c  

^a CLARIANT CORPORATION   (United States)

^b CYPRESS SEMICONDUCTOR   (United States)

^c Hynix Semiconductor Inc   (South Korea)

Author keywords

193 nm resists; Acid diffusion; AZ AX 1050P; Contact hole; Illumination; Resist components

Indexed keywords

ACID; POLYMER;

ARTICLE; GENERATOR; MATERIALS; MATERIALS TESTING; OPTICS; PHOTOCHEMISTRY; SIMULATION; TEMPERATURE;

EID: 0036361606     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.15.549     Document Type: Article

References (11)