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Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4345, Issue 1, 2001, Pages 712-724

193nm single layer resist materials: Total consideration on design, physical properties, and lithographic performances on all major alicyclic platform chemistries

(18) Kajita, T a Nishimura, Y a Yamamoto, M a Ishii, H a Soyano, A a Kataoka, A a Slezak, M b,c Shimizu, M c Varanasi, P R d Jordahamo, G d Lawson, M C d Chen, R d Brunsvold, W R d Li, W d Allen, R D e Ito, H e Truong, H e Wallow, T e

a JSR CORPORATION (Japan)

b JSR Microelectronics Inc (United States)

c JSR Micro NV (Belgium)

d IBM MICROELECTRONICS (United States)

e IBM ALMADEN RESEARCH CENTER (United States)

Author keywords

(Meth)acrylate; Addition polymer; AFM; ArF; COMA; Cyclyzed system; ESCA; Etch resistance; Line slimming; Norbornene; ROMP; Surface roughness; Tetracyclododecene; VEMA

Indexed keywords

ETCHING; OLEFINS; OPTIMIZATION; POLYMERIZATION; RESINS; SURFACE ROUGHNESS;

ETCH RESISTANCE; SINGLE LAYER RESISTS (SLR);

PHOTORESISTS;

EID: 0005103271 PISSN: 0277786X EISSN: None Source Type: Journal
DOI: 10.1117/12.436833 Document Type: Article

Times cited : (8)

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