Recessed gate GaN modfets

Solid-State Electronics

Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 247-250

  Burm, Jinwook ^a   Schaff, William J ^a   Martin, Glenn H ^a   Eastman, Lester F ^a   Amano, Hiroshi ^b   Akasaki, Isamu ^b  

^a Department of Obstetrics Gynecology   (United States)

^b MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; ETCHING; GATES (TRANSISTOR); HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSCONDUCTANCE;

MODULATION DOPED FIELD EFFECT TRANSISTOR (MODFET);

FIELD EFFECT TRANSISTORS;

EID: 0031078864     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(96)00210-9     Document Type: Article

References (10)

1. M. A. Khan, A. Bhattarai, J. N. Kuznia and D. T. Olsen, Appl. Phys. Lett. 63, 1214 (1993).
2. M. A. Khan, J. N. Kuznia, D. T. Olsen, W. J. Schaff, J. Burm and M. S. Shur, Appl. Phys. Lett. 65, 1121 (1994).
3. S. C. Binari, L. B. Rowland, G. Keiner, W. Kruppa, H. B. Dietrich, K. Doverspike and D. K. Gaskill, Proc. Int. Symp. on Compound Semiconductors, San Diego, CA, 459 (1994).
4. H. Amano, M. Kito, K. Hiramatsu and I. Akasaki, Jpn. J. Appl. Phys. 73, L212 (1989).
5. S. Nakamura, M. Senoh and T. Mukai, Jpn. J. Appl. Phys. 32, L8 (1992).
6. A. Bykhovski, B. Gelmont, M. Shur and A. Khan, J. Appl. Phys. 77, 1616 (1995).
7. S. J. Pearton, C. R. Abernathy, F. Ren, J. R. Lothian, P. W. Wisk, A. Katz and C. Constantine, Semicond. Sci. Technol. 8, 310 (1993).
8. For example, M. B. Das, in HEMTs and HBTs: Devices, Fabrications and Circuits (Edited by F. Ali and A. Gupta), Chap. 2, p. 52. Artech House, Norwood, MA (1991).
9. S. M. Sze, High-Speed Semiconductor Devices, p. 302. John Wiley, New York (1990).
10. U. K. Mishira, Private communication.