Study of dc conduction mechanisms in dysprosium-manganese oxide insulator thin films grown on Si substrates

Microelectronics Reliability

Volumn 46, Issue 8, 2006, Pages 1303-1308

  Dakhel, A A ^a  

^a UNIVERSITY OF BAHRAIN   (Bahrain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL ACTIVATION; CRYSTAL STRUCTURE; DYSPROSIUM COMPOUNDS; FILM GROWTH; SILICON; X RAY DIFFRACTION;

DYSPROSIUM-MANGANESE OXIDE INSULATORS; RELATIVE PERMITTIVITY; RICHARDSON-SCHOTTKY (RS) MECHANISM;

THIN FILMS;

EID: 33746228320     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2005.11.001     Document Type: Article

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