Electrical properties of thin RF sputtered Ta2O5 films after constant current stress

Microelectronics Reliability

Volumn 43, Issue 2, 2003, Pages 235-241

  Pecovska Gjorgjevich, M ^a   Novkovski, N ^a   Atanassova, E ^b  

^a SS CYRIL AND METHODIUS UNIVERSITY   (Macedonia)

^b INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); LEAKAGE CURRENTS; SPUTTERING; STRESSES; TANTALUM COMPOUNDS;

CURRENT STRESS;

THIN FILMS;

EID: 0037304020     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00326-8     Document Type: Conference Paper

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