Effect of traps in the transition Si/SiO2 layer on input characteristics of SOI transistors

Microelectronics Reliability

Volumn 40, Issue 4-5, 2000, Pages 799-802

  Lysenko, V S ^a   Tyagulski, I P ^a   Gomeniuk, Y V ^a   Osiyuk, I N ^a  

^a INSTITUTE OF HYDROBIOLOGY   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRON TRAPS; SILICON ON INSULATOR TECHNOLOGY; TRANSCONDUCTANCE;

SHALLOW TRAPS;

MOSFET DEVICES;

EID: 0033741277     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00297-8     Document Type: Article

References (9)

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