Electrical characterisation of SiON/n-Si structures for MOS VLSI electronics

Microelectronics Journal

Volumn 35, Issue 5, 2004, Pages 421-425

  Konofaos, N ^a  

^a UNIVERSITY OF PATRAS   (Greece)

Author keywords

Bulk charges; Dielectric constant; Interface traps; Metal oxide semiconductor devices; Silicon oxynitride; Thin film devices

Indexed keywords

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; FILM GROWTH; PERMITTIVITY; SPECTROSCOPIC ANALYSIS; THIN FILM DEVICES; THIN FILMS; VLSI CIRCUITS;

BULK CHARGES; INTERFACE TRAPS; SILICON OXYNITRIDE;

MOS DEVICES;

EID: 1642617622     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2004.01.001     Document Type: Article

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