SCOPUS 정보 검색 플랫폼

Vacuum

Volumn 65, Issue 1, 2002, Pages 19-25

Interfacial properties of a hetero-structure YSZ/p-(1 0 0)Si prepared by magnetron sputtering

(6) Jeon, Sanghun a Takanori, Matsuda b Unno, Akira b Wasa, Kiyotaka b Ichikawa, Yoko c Hwang, Hyunsang a

a Gwangju Institute of Science and Technology (GIST) (South Korea)

b YOKOHAMA CITY UNIVERSITY (Japan)

c RITE (Japan)

Author keywords

Epitaxial; Si gate oxide; Sputtering; YSZ thin films

Indexed keywords

COOLING; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); HETEROJUNCTIONS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MAGNETRON SPUTTERING; MOSFET DEVICES; SEMICONDUCTING SILICON; SPUTTER DEPOSITION; ZIRCONIA;

INTERFACIAL LAYERS;

THIN FILMS;

EID: 0037176763 PISSN: 0042207X EISSN: None Source Type: Journal
DOI: 10.1016/S0042-207X(01)00390-6 Document Type: Article

Times cited : (15)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.