Effect of exponentially distributed deep levels on the current and capacitance of a MIS diode

Solid-State Electronics

Volumn 45, Issue 2, 2001, Pages 315-324

  Sanyal, S ^a   Chattopadhyay, P ^a  

^a UNIVERSITY OF CALCUTTA   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; SEMICONDUCTOR DIODES;

DEEP LEVEL IMPURITIES; DEFECT DISTRIBUTION;

MIS DEVICES;

EID: 0035247211     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00229-X     Document Type: Article

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