Anisotropy in the wet-etching of semiconductors

Current Opinion in Solid State and Materials Science

Volumn 9, Issue 1-2, 2005, Pages 84-90

  Kelly, John J ^a   Philipsen, Harold G G ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

Author keywords

Electrochemistry; Galvanic effects; III V Semiconductors; Silicon; Wet etching

Indexed keywords

ALKALINITY; ANISOTROPY; ELECTROCHEMISTRY; ETCHING; GALVANIZING; SEMICONDUCTING SILICON; SOLUTIONS; SURFACE CHEMISTRY;

ANISOTROPIC ETCHING; GALVANIC EFFECTS; III-V SEMICONDUCTORS; WET ETCHING;

SEMICONDUCTOR MATERIALS;

EID: 33744504976     PISSN: 13590286     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cossms.2006.04.003     Document Type: Article

References (44)

1. Notten P.H.L., Van den Meerakker J.E.A.M., and Kelly J.J. Etching of III-V semiconductors: an electrochemical approach (1991), Elsevier, Oxford
2. Pearton S.J., and Ren F. Wet chemical etching of compound semiconductors. Electrochem Soc Proc PV2005-04 (2005) 147-159
3. Elwenspoek M, Jansen H. In: Silicon micromachining, Cambridge studies in semiconductor physics and microelectronic engineering, vol. 7, 1998.
4. Wang J., Thompson D.A., and Simmons J.G. Wet chemical etching for V-grooves into InP substrates. J Electrochem Soc 145 8 (1998) 2931-2937
5. Wind R.A., Jones H., Little M.J., and Hines M.A. Orientation-resolved chemical kinetics: using microfabrication to unravel the complicated chemistry of KOH/Si etching. J Phys Chem B 106 7 (2002) 1557-1569
6. Wind R.A., and Hines M.A. Macroscopic etch anisotropies and microscopic reaction mechanisms: a micromachined structure for the rapid assay of etchant anisotropy. Surf Sci 460 1-3 (2000) 21-38
7. Seidel H., Csepregi L., Heuberger A., and Baumgärtel H. Anisotropic etching of crystalline silicon in alkaline solutions - I - Orientation dependence and behavior of passivation layers. J Electrochem Soc 137 11 (1990) 3612-3626
8. Raisch P., Haiss W., Nichols R.J., and Schiffrin D.J. Time domain impedance spectroscopy for probing the termination of silicon (1 0 0) surfaces in aqueous solution. J Phys Chem B 105 50 (2001) 12508-12515
9. Allongue P., Costa-Kieling V., and Gerischer H. Etching of silicon in NaOH solutions - II - Electrochemical studies of n-Si(1 1 1) and (1 0 0) and mechanisms of the dissolution. J Electrochem Soc 140 4 (1993) 1018-1026
10. Philipsen H.G.G., and Kelly J.J. Anisotropy in the anodic oxidation of silicon in KOH solution. J Phys Chem B 109 36 (2005) 17245-17253
11. Xia X.H., and Kelly J.J. Chemical etching and anodic oxidation of (1 0 0) silicon in alkaline solution: the role of applied potential. Phys Chem Chem Phys 3 23 (2001) 5304-5310
12. Gräf D., Grundner M., and Schulz R. Reaction of water with hydrofluoric acid treated silicon(1 1 1) and (1 0 0) surfaces. J Vac Sci Technol A 7 3 (1989) 808-813
13. Angermann H., Henrion W., Rebien M., Zettler J.-.T., and Röseler A. Characterization of chemically prepared Si-surfaces by UV-VIS and IR spectroscopic ellipsometry and surface photovoltage. Surf Sci 388 (1997) 15-23
14. Dumas P., Chabal Y.J., and Jakob P. Morphology of hydrogen-terminated Si(1 1 1) and Si(1 0 0) surfaces upon etching in HF and buffered-HF solutions. Surf Sci 269/270 (1992) 867-873
15. Baum T., and Schiffrin D.J. Mechanistic aspects of anisotropic dissolution of materials: etching of single-crystal silicon in alkaline solutions. J Chem Soc - Far Trans 94 5 (1998) 691-694
16. Allongue P., Costa-Kieling V., and Gerischer H. Etching of silicon in NaOH solutions - I - In situ scanning tunneling microscopy investigation of n-Si (1 1 1). J Electrochem Soc 140 4 (1993) 1009-1018
17. Haiss W., Raisch P., Schiffrin D.J., Bitsch L., and Nichols R.J. An FTIR study of the surface chemistry of the dynamic Si(1 0 0) surface during etching in alkaline solution. Faraday Discuss 121 (2002) 167-180
18. Hines M.A. The picture tells the story: using surface morphology to probe chemical etching reactions. Int Rev Phys Chem 20 4 (2001) 645-672
19. van Veenendaal E. From an atomistic to a continuum description of crystal growth - application to wet chemical etching of silicon. PhD thesis. Katholieke Universiteit Nijmegen, The Netherlands, 2001.
20. van Suchtelen J., and van Veenendaal E. The construction of orientation-dependent crystal growth and etch rate functions - Part I - Mathematical and physical aspects. J Appl Phys 87 12 (2000) 8721-8731
21. van Veenendaal E., van Suchtelen J., van Enckevort W.P.J., Sato K., Nijdam A.J., Gardeniers J.G.E., et al. The construction of orientation-dependent crystal growth and etch rate functions - Part II - Application to wet chemical etching of silicon in potassium hydroxide. J Appl Phys 87 12 (2000) 8732-8740
22. van Veenendaal E., Sato K., Shikida M., and van Suchtelen J. Micromorphology of single crystalline silicon surfaces during anisotropic wet chemical etching in KOH and TMAH. Sens Actuators A 93 3 (2001) 219-231
23. van Veenendaal E., Sato K., Shikida M., Nijdam A.J., and van Suchtelen J. Micro-morphology of single crystalline silicon surfaces during anisotropic wet chemical etching in KOH: velocity source forests. Sens Actuators A 93 3 (2001) 232-242
24. Notten P.H.L., and Kelly J.J. Evidence for cathodic protection of crystallographic facets from GaAs etching profiles. J Electrochem Soc 134 2 (1987) 444-448
25. Smith R.L., Kloeck B., De Rooij N., and Collins S.D. The potential dependence of silicon anisotropic etching in KOH at 60 °C. J Electroanal Chem 238 (1987) 103-113
26. Kretschmer H.-R., Xia X.H., Kelly J.J., and Steckenborn A. Anisotropic etching of three-dimensional shapes in silicon: the important role of galvanic interaction. J Electrochem Soc 151 10 (2004) C633-C636
27. Raisch P., Haiss W., Nichols R.J., and Schiffrin D.J. In-situ atomic force microscopy of silicon(1 0 0) in aqueous potassium hydroxide. Electrochim Acta 45 28 (2000) 4635-4643
28. 4F revisited. Electrochim Acta 45 28 (2000) 4591-4598
29. Lehmann V. Electrochemistry of silicon - instrumentation, science, materials and applications (2002), Wiley-VCH, Weinheim
30. Lehmann V. The physics of macropore formation in low doped n-type silicon. J Electrochem Soc 140 10 (1993) 2836-2843
31. Lehmann V., and Ronnebeck S. The physics of macropore formation in low-doped p-type silicon. J Electrochem Soc 146 8 (1999) 2968-2975
32. Ottow S., Lehmann V., and Föll H. Processing of three-dimensional microstructures using macroporous n-type silicon. J Electrochem Soc 143 1 (1996) 385-390
33. Matthias S., Müller F., and Gösele U. Simple cubic three-dimensional photonic crystal based on macroporous silicon and anisotropic posttreatment. J Appl Phys 98 (2005) 023524
34. Matthias S., Müller F., Schilling J., and Gösele U. Pushing the limits of macroporous silicon etching. Appl Phys A 80 7 (2005) 1391-1396
35. Lehmann V. Alkaline etching of macroporous silicon membranes. Porous semiconductors-science and technology, extended abstracts 5th international conference, Sitges, Spain, I4-01, 2006. p. 49-50.
36. Van Driel A.F., Bret B.P.J., Vanmaekelbergh D., and Kelly J.J. Hot carrier luminescence during porous etching of GaP under high electric field conditions. Surf Sci 529 (2003) 197-203
37. Takizawa T., Arai S., and Nakahara M. Fabrication of vertical and uniform-size porous InP structure by electrochemical anodization. Jpn J Appl Phys 33 (1994) L643-L645
38. Kikuno E., Amiotti M., Takizawa T., and Arai S. Anisotropic refractive index of porous InP fabricated by anodization of (1 1 1)A surface. Jpn J Appl Phys 34 (1995) 177-178
39. Föll H., Langa S., Carstensen J., Christophersen M., and Tiginyanu I.M. Pores in III-V semiconductors. Adv Mater 15 3 (2003) 183-198
40. Wloka J., Mueller K., and Schmuki P. Pore morphology and self-organization effects during etching of n-type GaP(1 0 0) in bromide solutions. Electrochem Solid-State Lett 8 12 (2005) B72-B75
41. Wloka J., Lockwood D.J., and Schmuki P. High intensity and oscillatory electroluminescence observed during porous etching of GaP in HBr and HF electrolytes. Chem Phys Lett 414 (2005) 47-50
42. Ross F.M., Oskam G., Searson P.C., Macaulay J.M., and Liddle J.A. Crystallographic aspects of pore formation in gallium arsenide and silicon. Philos Mag A 75 (1997) 525-539
43. Oskam G., Natarajan A., Searson P.C., and Ross F.M. The formation of porous GaAs in HF solutions. Appl Surf Sci 119 (1997) 160-168
44. Langa S., Carstensen J., Christophersen M., Steen K., Frey S., Tiginyanu I.M., et al. Uniform and nonuniform nucleation of pores during the anodization of Si, Ge, and III-V semiconductors. J Electrochem Soc 152 8 (2005) C525-C531